STx80N10F7,STH80N10F7-2 دیتاشیت

STx80N10F7,STH80N10F7-2

مشخصات دیتاشیت

نام دیتاشیت STx80N10F7,STH80N10F7-2
حجم فایل 1393.73 کیلوبایت
نوع فایل pdf
تعداد صفحات 25

مشاهده دیتاشیت STx80N10F7,STH80N10F7-2

دانلود دیتاشیت

سایر مستندات

STH80N10F7-2 25 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STH80N10F7-2
  • Power Dissipation (Pd): 110W
  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 80A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9.5mΩ@10V,40A
  • Package: H2PAK-2
  • Manufacturer: STMicroelectronics
  • Series: DeepGATE™, STripFET™ VII
  • Packaging: Cut Tape (CT)
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: H2Pak-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number: STH80N
  • detail: N-Channel 100V 80A (Tc) 110W (Tc) Surface Mount H2Pak-2

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